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savantic semiconductor product specification silicon pnp power transistors 2sb707 2SB708 description with to-220c package complement to type 2sd568/569 applications for low frequency power amplifier low speed switching industrial use pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v 2sb707 -60 v ceo collector-emitter voltage 2SB708 open base -80 v v ebo emitter-base voltage open collector -7 v i c collector current -7 a i cm collector current-peak -15 a i b base current -3.5 a t a =25 1.5 p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2sb707 2SB708 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sb707 -60 v (br)ceo collector-emitter breakdown voltage 2SB708 i c =-10ma; i b =0 -80 v v cesat collector-emitter saturation voltage i c =-5a;i b =-0.5 a -0.5 v v besat base-emitter saturation voltage i c =-5a;i b =-0.5 a -1.5 v i cbo collector cut-off current v cb =-60v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe-1 dc current gain i c =-3a ; v ce =-1v 40 200 h fe-2 dc current gain i c =-5a ; v ce =-1v 20 h fe-2 classifications r o y 40-80 60-120 100-200
savantic semiconductor product specification 3 silicon pnp power transistors 2sb707 2SB708 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)

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